IRF7351TRPBF International Rectifier, IRF7351TRPBF Datasheet - Page 9

• Manufacturer Part Number: IRF7351TRPBF
• Description: MOSFET N-CH DUAL 60V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7351TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 30V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7351TRPBFTR

www.irf.com
SO-8 Package Outline (Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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