IRF7351TRPBF International Rectifier, IRF7351TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7351TRPBF
• Description: MOSFET N-CH DUAL 60V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7351TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 30V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7351TRPBFTR

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0.0001
0.001
0.01
100
0.1
10
1E-006
1
8
7
6
5
4
3
2
1
0
Fig 9. Maximum Drain Current vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
SINGLE PULSE
( THERMAL RESPONSE )
0.10
0.02
0.20
0.05
0.01
Case Temperature
1E-005
50
T C , Case Temperature (°C)
75
0.0001
100
0.001
125
t 1 , Rectangular Pulse Duration (sec)
150
τ
J
τ
0.01
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
Fig 10. Threshold Voltage vs. Temperature
R
1
R
3.5
3.0
2.5
2.0
1.5
1
0.1
-75 -50 -25
τ
2
R
τ
2
2
R
2
R
τ
3
3
R
τ
3
3
1
T J , Temperature ( °C )
τ
0
I D = 50µA
R
4
τ
4
R
4
4
25
τ
A
τ
A
10
Ri (°C/W) τi (sec)
50
3.6777
21.765
25.683
11.374
75 100 125 150
100
0.009926
25.24029
3.723179
0.348001
5
1000