IRF7351TRPBF International Rectifier, IRF7351TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7351TRPBF
• Description: MOSFET N-CH DUAL 60V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7351TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 30V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7351TRPBFTR

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+
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12V
Fig 17a. Gate Charge Test Circuit
V
GS
D.U.T
Same Type as D.U.T.
Current Regulator
.2µF
ƒ
Fig 16.
+
-
50KΩ
3mA
•
•
•
•
Current Sampling Resistors
SD
.3µF
I
•
•
•
G
D.U.T.
-
„
G
I
D
HEXFET
+
+
-
V
DS
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Vgs(th)
Qgs1 Qgs2
Vds
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 17b. Gate Charge Waveform
P.W.
SD
DS
Waveform
Waveform
for N-Channel
Ripple ≤ 5%
Body Diode
Period
Qgd
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgodr
D =
Period
P.W.
V
V
I
SD
Vgs
GS
DD
=10V
7
Id