IRF7351TRPBF International Rectifier, IRF7351TRPBF Datasheet - Page 10

• Manufacturer Part Number: IRF7351TRPBF
• Description: MOSFET N-CH DUAL 60V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7351TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 30V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7351TRPBFTR

Notes:
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10
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
SO-8 Tape and Reel
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
R
max. junction temperature.
Starting T
G
= 25Ω, I
J
AS
= 25°C, L = 16mH
= 6.4A.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
8.1 ( .318 )
7.9 ( .312 )
TERMINAL NUMBER 1
This product has been designed and qualified for the Industrial market.
(12.992)
330.00
MAX.
Visit us at www.irf.com for sales contact information. 11/09
„
…
Data and specifications subject to change without notice.
When mounted on 1 inch square copper board.
Qualification Standards can be found on IR’s Web site.
θ
FEED DIRECTION
12.3 ( .484 )
11.7 ( .461 )
14.40 ( .566 )
12.40 ( .488 )
TAC Fax: [phone]
www.irf.com