IRF7351TRPBF International Rectifier, IRF7351TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7351TRPBF
• Description: MOSFET N-CH DUAL 60V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7351TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.8 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1330pF @ 30V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7351TRPBFTR

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Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
100
0.1
10
0.1
10
1
1
0.1
2
T J = 150°C
V DS , Drain-to-Source Voltage (V)
3.8V
V GS , Gate-to-Source Voltage (V)
1
3
≤ 60µs PULSE WIDTH
Tj = 25°C
10
V DS = 25V
≤ 60µs PULSE WIDTH
4
T J = 25°C
TOP
BOTTOM
100
5
VGS
10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
3.8V
1000
6
100
10
1
2.0
1.8
1.5
1.3
1.0
0.8
0.5
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
Fig 4. Normalized On-Resistance
I D = 8.0A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
3.8V
T J , Junction Temperature (°C)
1
vs. Temperature
≤ 60µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
100
VGS
10V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
3.8V
1000
3