IRF7907TRPBF International Rectifier, IRF7907TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7907TRPBF
• Description: MOSFET DUAL N-CH 30V 9.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7907TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 9.1A, 11A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.1 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
Fig 29a. Unclamped Inductive Test Circuit
Fig 30a. Switching Time Test Circuit
Fig 31a. Gate Charge Test Circuit

12V
‚
+
-
V
GS
R G
Same Type as D.U.T.
20V
R G
V DS
Current Regulator
20V
V
V DS
.2µF
GS
D.U.T
t p
t p
50KΩ
-3mA
Current Sampling Resistors
I AS
Fig 28.
.3µF
D.U.T
I AS
ƒ
D.U.T
0.01 Ω
+
-
L
I
•
•
•
•
G
0.01 Ω
L
SD
D.U.T.
•
•
•
I
D
15V
15V
+
-
V
-
DS
DRIVER
„
G
HEXFET
DRIVER
+
-
+
-
V DD
+
V DD
A
A
®
Power MOSFETs
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 29b. Unclamped Inductive Waveforms
90%
V
10%
V
DS
Fig 30b. Switching Time Waveforms
P.W.
SD
GS
DS
I
Fig 31b. Gate Charge Waveform
AS
Vgs(th)
Waveform
Qgs1 Qgs2
Waveform
Vds
for N-Channel
Ripple ≤ 5%
Body Diode
t
d(on)
Period
Body Diode Forward
Diode Recovery
Current
t
r
Qgd
dv/dt
Forward Drop
t p
di/dt
Qgodr
D =
t
d(off)
Period
P.W.
V
t
(BR)DSS
f
V
V
I
www.irf.com
SD
GS
DD
Vgs
=10V
Id