IRF7907TRPBF International Rectifier, IRF7907TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7907TRPBF
• Description: MOSFET DUAL N-CH 30V 9.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7907TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 9.1A, 11A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.1 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
0.01
100
100
0.1
0.1
10
10
1
1E-006
1
1E-006
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)
D = 0.50
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
0.0001
V
C
o
o
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
L
0.001
0.001
Fig 27. Layout Diagram
0.01
0.01
τ
J
τ
τ
J
J
τ
τ
GND
1
J
τ
Ci= τi/Ri
τ
1
Ci= τi/Ri
1
τ
S2
G2
S1
G1
Ci
1
Ci
i/Ri
R
i/Ri
2
3
4
R
1
1
R
1
R
1
1
0.1
0.1
τ
2
τ
R
τ
2
2
R
τ
2
R
2
2
R
2
2
R
τ
R
3
τ
3
R
τ
3
3
8
7
6
5
R
C
3
3
τ
V
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Ta
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Ta
in
in
D2
D2
D1
D1
τ
R
4
τ
1
R
τ
4
4
1
R
4
τ
4
R
4
4
4
τ
a
τ
a
Ri (°C/W)
2.288789 0.000137
7.167906 0.014957
36.98193
16.07333
Ri (°C/W)
1.848416 0.000164
11.29818 0.054158
34.97452
14.3858
10
10
τι (sec)
0.72461
τι (sec)
0.9598
26.8
38.2
100
100
7