IRF7907TRPBF International Rectifier, IRF7907TRPBF Datasheet

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IRF7907TRPBF

Manufacturer Part Number

IRF7907TRPBF

Description

MOSFET DUAL N-CH 30V 9.1A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF7907TRPBF.pdf (10 pages)

2.IRF7907TRPBF.pdf (10 pages)

Specifications of IRF7907TRPBF

Package / Case

8-SOIC (3.9mm Width)

Mounting Type

Surface Mount

Power - Max

2W

Fet Type

2 N-Channel (Dual)

Gate Charge (qg) @ Vgs

10nC @ 4.5V

Vgs(th) (max) @ Id

2.35V @ 25µA

Current - Continuous Drain (id) @ 25° C

9.1A, 11A

Drain To Source Voltage (vdss)

30V

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

16.4 mOhm @ 9.1A, 10V

Configuration

Dual

Transistor Polarity

Dual N-Channel

Resistance Drain-source Rds (on)

20.5 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

9.1 A

Power Dissipation

2.0 W

Mounting Style

SMD/SMT

Gate Charge Qg

6.7 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IRF7907TRPBF

Manufacturer:

IR

Quantity:

20 000

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Download datasheet (295Kb)

Benefits

l

l

l

l

l

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Applications

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www.irf.com

V

V

I

I

I

P

P

T

T

R

R

Absolute Maximum Ratings

Thermal Resistance

D

D

DM

J

STG

DS

GS

D

D

θJL

θJA

and Current

Dual SO-8 MOSFET for POL

Converters in Notebook Computers, Servers,

Graphics Cards, Game Consoles

and Set-Top Box

@ T

@ T

Very Low R

Low Gate Charge

Fully Characterized Avalanche Voltage

20V V

Improved Body Diode Reverse Recovery

100% Tested for R

Lead-Free

@T

@T

A

A

A

A

= 25°C

= 70°C

= 25°C

= 70°C

GS

Max. Gate Rating

DS(on)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current c

Power Dissipation

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Drain Lead g

Junction-to-Ambient fg

at 4.5V V

G

GS

Parameter

Parameter

GS

GS

@ 10V

@ 10V

V

30V

G2

G1

S 2

S 1

DSS

1

2

3

4

Q1 16.4m:@V

Q2 11.8m:@V

Q1 Max.

Q1 Max.

0.016

62.5

9.1

7.3

2.0

1.3

76

20

R

IRF7907PbF

8

7

6

5

DS(on)

-55 to + 150

D2

D2

D1

D1

HEXFET

± 20

30

max

Q2 Max.

Q2 Max.

GS

GS

0.016

62.5

8.8

2.0

1.3

®

11

85

20

= 10V

= 10V

Power MOSFET

SO-8

9.1A

Units

Units

W/°C

°C/W

11A

°C

W

I

V

A

D

1

1/4/06

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