IRF7907TRPBF International Rectifier, IRF7907TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7907TRPBF
• Description: MOSFET DUAL N-CH 30V 9.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7907TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 9.1A, 11A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.1 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 19. Maximum Drain Current vs. Ambient Temp.
Fig 23. Maximum Avalanche Energy vs. Drain Current
6
Fig 21. Threshold Voltage vs. Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
10
50
40
30
20
10
8
6
4
2
0
0
-75
25
25
-50
Starting T J , Junction Temperature (°C)
50
50
T J , Ambient Temperature (°C)
-25
T J , Temperature ( °C )
Q1 - Control FET
0
75
75
25
50
100
100
TOP
BOTTOM
I D = 250µA
75
100 125
125
125
3.0A
3.5A
7.0A
I D
Typical Characteristics
150
150
150
Fig 24. Maximum Avalanche Energy vs. Drain Current
Fig 20. Maximum Drain Current vs. Ambient Temp.
Fig 22. Threshold Voltage vs. Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
60
50
40
30
20
10
12
10
0
8
6
4
2
0
-75
25
25
-50
Starting T J , Junction Temperature (°C)
50
50
T J , Ambient Temperature (°C)
-25
Q2 - Synchronous FET
T J , Temperature ( °C )
0
75
75
25
50
100
100
TOP
BOTTOM
I D = 250µA
75
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100 125
125
125
3.8A
4.4A
8.8A
I D
150
150
150