IRF7907TRPBF International Rectifier, IRF7907TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7907TRPBF
• Description: MOSFET DUAL N-CH 30V 9.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7907TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 9.1A, 11A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.1 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 13. Normalized On-Resistance vs. Temperature
Fig 15. Typical Source-Drain Diode Forward Voltage
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Fig 17. Typical On-Resistance vs.Gate Voltage
100.0
10.0
1.0
0.1
1.5
1.0
0.5
40
30
20
10
0.2
-60 -40 -20
2
I D = 9.1A
V GS = 10V
T J = 150°C
0.4
V SD , Source-to-Drain Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
4
0.6
0
Q1 - Control FET
20
T J = 25°C
0.8
40
6
1.0
60
T J = 125°C
T J = 25°C
80 100 120 140 160
1.2
V GS = 0V
8
I D = 8.8A
1.4
Typical Characteristics
1.6
10
Fig 16. Typical Source-Drain Diode Forward Voltage
Fig 14. Normalized On-Resistance vs. Temperature
Fig 18. Typical On-Resistance vs.Gate Voltage
1.5
1.0
0.5
100.0
10.0
1.0
0.1
40
30
20
10
-60 -40 -20
0
0.2
I D = 11A
V GS = 10V
2
T J = 150°C
0.4
V SD , Source-to-Drain Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
0
Q2 - Synchronous FET
4
0.6
20
T J = 25°C
0.8
40
6
60
1.0
T J = 125°C
T J = 25°C
80 100 120 140 160
1.2
V GS = 0V
8
I D = 11A
1.4
1.6
10
5