IRF7309PBF International Rectifier, IRF7309PBF Datasheet - Page 8

• Manufacturer Part Number: IRF7309PBF
• Description: MOSFET N+P 30V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7309PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 520pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 1.4W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7309
Refer to the Appendix Section for the following:
Appendix A: Figure 24, Peak Diode Recovery dv/dt Test Circuit — See page 329.
Appendix B: Package Outline Mechanical Drawing — See page 332.
Appendix C: Part Marking Information — See page 332.
Appendix D: Tape and Reel Information — See page 336.
100
0.1
10
0.00001
1
Fig 22b. Gate Charge Test Circuit
D = 0.50
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.05
0.20
0.10
0.02
0.01
0.0001
(THERMAL RESPONSE)
SINGLE PULSE
0.001
t , Rectangular Pulse Duration (sec)
1
0.01
N- and P-Channel
P-Channel
154
0.1
Fig 22b. Basic Gate Charge Waveform
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
J
10
x Z
DM
1
+ T
thJA
2
P
DM
100
A
t
1
t 2
1000
A