IRF7309PBF International Rectifier, IRF7309PBF Datasheet - Page 3
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IRF7309PBF
Manufacturer Part Number
IRF7309PBF
Description
MOSFET N+P 30V 3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF7309PBF
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4A, 3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 4.5V
Input Capacitance (ciss) @ Vds
520pF @ 15V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Power Dissipation
1.4W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1000
100
100
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics,
1
0.1
4
TOP
BOTTOM 4.5V
V
V
5
GS
DS
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
15V
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25°C
J
T
1
6
J
= 25
7
o
C
T = 150°C
V
20µs PULSE WIDTH
J
20µs PULSE WIDTH
T = 25°C
DS
J
4.5V
10
= 15V
8
9
N-Channel
100
10
A
A
149
1000
100
Fig 2. Typical Output Characteristics,
10
1
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60
TOP
BOTTOM 4.5V
I
D
-40
= 4.0A
V
DS
T , Junction Temperature (°C)
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
15V
-20
J
Vs. Temperature
, Drain-to-Source Voltage (V)
T
0
J
1
= 150
20
40
o
C
20µs PULSE WIDTH
T = 150°C
60
J
IRF7309
4.5V
10
80
100 120 140 160
V
GS
= 10V
100
A
A