IRF7309PBF International Rectifier, IRF7309PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7309PBF
• Description: MOSFET N+P 30V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7309PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 520pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 1.4W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7309
Fig 16. Typical Capacitance Vs. Drain-to-
Fig 14. Typical Transfer Characteristics
100
1000
10
800
600
400
200
1
0
4
1
-V
5
-V
GS
DS
Source Voltage
V
C
C
C
, Gate-to-Source Voltage (V)
GS
iss
rss
oss
, Drain-to-Source Voltage (V)
C
C
C
6
iss
oss
rss
= 0V,
T = 25°C
= C
= C
= C
J
gs
gd
ds
+ C
+ C
7
10
V
20µs PULSE WIDTH
gd
gd
f = 1MHz
DS
T = 150°C
, C
J
= -15V
8
ds
SHORTED
9
P-Channel
10
100
A
152
A
Fig 17. Typical Gate Charge Vs. Gate-to-
20
16
12
8
4
0
2.0
1.5
1.0
0.5
0.0
0
Fig 15. Normalized On-Resistance
I
V
D
-60
DS
= -3.0A
I
D
= -24V
-40
= -3.0A
Q , Total Gate Charge (nC)
5
T , Junction Temperature (°C)
-20
J
G
Vs. Temperature
Source Voltage
0
10
20
40
FOR TEST CIRCUIT
15
60
SEE FIGURE 22
80
100 120 140 160
20
V
GS
= -10V
25
A
A