IRF7309PBF International Rectifier, IRF7309PBF Datasheet - Page 7

• Manufacturer Part Number: IRF7309PBF
• Description: MOSFET N+P 30V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7309PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 520pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 1.4W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 20. Max.Drain Current Vs. Ambient Temp.
Fig 18. Typical Source-Drain Diode Forward
100
0.1
10
3.0
2.0
1.0
0.0
1
0.0
25
-V
0.3
SD
T , AmbientTemperature (°C)
50
A
, Source-to-Drain Voltage (V)
T = 150°C
J
Voltage
0.6
75
0.9
100
T = 25°C
J
125
1.2
V
GS
= 0V
P-Channel
150
1.5
A
A
153
Fig 19. Maximum Safe Operating Area
100
0.1
Fig 21a. Switching Time Test Circuit
10
Fig 21b. Switching Time Waveforms
1
0.1
T
T
Single Pulse
A
J
= 25°C
= 150°C
OPERATION IN THIS AREA LIMITED
-V
DS
, Drain-to-Source Voltage (V)
1
BY R
DS(on)
IRF7309
10
1ms
10ms
100ms
100µs
100
A