IRF7309PBF International Rectifier, IRF7309PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7309PBF
• Description: MOSFET N+P 30V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7309PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 520pF @ 15V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 1.4W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7309
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
I
L
L
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
GSS
DSS
d(on)
d(off)
f
r
SM
S
rr
on
D
S
V
fs
(BR)DSS
GS(th)
DS(ON)
iss
oss
rss
SD
g
gs
gd
rr
(BR)DSS
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel I
P-Channel I
Pulse width
/ T
J
Gate-to-Source Forward Leakage
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductace
Internal Source Inductance
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
SD
SD
300µs; duty cycle
-1.8A, di/dt
2.4A, di/dt
Parameter
Parameter
73A/µs, V
90A/µs, V
2%.
DD
DD
J
= 25°C (unless otherwise specified)
V
V
(BR)DSS
(BR)DSS
, T
N-Ch 30
P-Ch -30
N-Ch — 0.032 —
P-Ch — -0.037 —
N-Ch 1.0
P-Ch -1.0
N-Ch 5.2
P-Ch 2.5
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch
P-Ch
N-Ch —
N-Ch —
N-Ch —
N-Ch —
N-Ch —
, T
N-P
N-P
N-P
P-Ch —
P-Ch —
P-Ch —
P-Ch —
P-Ch —
N-P
J
148
J
Min. Typ. Max. Units
150°C
Min. Typ. Max. Units
Intrinsic turn-on time is neglegible (turn-on is dominated by L
––
—
—
—
—
—
—
150°C
520
440
180
200
6.8
7.7
4.0
6.0
11
21
17
22
25
18
72
93
—
—
— 0.050
— 0.080
—
—
—
—
—
—
—
—
—
—
— ±100
—
—
—
—
—
—
47
53
56
66
—
—
—
—
—
—
0.10
0.16
-1.0
1.0
-25
2.9
2.9
7.9
9.0
-1.8
-1.0
25
25
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.8
-12
1.0
16
71
80
84
99
V/°C
nC
nH
µA
ns
pF
nC
ns
V
V
S
A
V
V
V
Reference to 25°C, I
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
V
Between lead tip
and center of die contact
N-Channel
I
P-Channel
I
N-Channel
V
R
P-Channel
V
R
N-Channel
V
P-Channel
V
T
T
N-Channel
T
P-Channel
T
D
D
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
DD
DD
GS
GS
D
D
J
J
J
J
= 2.6A, V
= -2.2A, V
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C, I
= 3.8
= 4.5
= V
= V
= 15V, I
= -24V, I
= 24V, V
= -24V, V
= 24V, V
= -24V, V
= 0V, I
= 0V, I
= 10V, I
= 4.5V, I
= -10V, I
= -4.5V, I
= ± 20V
= 10V, I
= -10V, I
= 0V, V
= 0V, V
GS
GS
, I
, I
D
D
DS
DS
DS
D
D
D
F
F
D
D
DS
= 250µA
D
S
S
= -250µA
D
D
GS
GS
D
D
GS
= 2.6A, di/dt = 100A/µs
= -2.2A, di/dt = 100A/µs
GS
= 250µA
= -250µA
= 2.4A
= 2.4A
= 2.6A, R
Conditions
= 1.8A, V
= -1.8A, V
= 2.0A
= -1.8A
= -1.8A
= 16V, V
= -2.2A, R
= 15V, ƒ = 1.0MHz
= -15V, ƒ = 1.0MHz
= -1.5A
= -16V, V
= 0V, T
= 0V
= 0V, T
= 0V
D
D
Conditions
= 1mA
= -1mA
J
GS
G
GS
J
GS
= 125°C
GS
G
= 125°C
= 6.0
= 4.5V
= 0V
= 6.0 ,
= 0V
= -4.5V
S
+L
D
)