SI1029X-T1-E3 Vishay, SI1029X-T1-E3 Datasheet - Page 5
![MOSFET N/P-CH COMPL 60V SOT563F](/photos/5/42/54218/pkg_5880_sml.jpg)
SI1029X-T1-E3
Manufacturer Part Number
SI1029X-T1-E3
Description
MOSFET N/P-CH COMPL 60V SOT563F
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI1029X-T1-E3
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
305mA, 190mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Input Capacitance (ciss) @ Vds
30pF @ 25V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.4ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1029X-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
P-CHANNEL TYPICAL CHARACTERISTICS (T
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
1.0
0.8
0.6
0.4
0.2
0.0
20
16
12
15
12
8
4
0
9
6
3
0
0.0
0
0
I
D
0.3
On-Resistance vs. Drain Current
= 500 mA
200
1
V
DS
Output Characteristics
Q
I - Drain Current (mA)
- Drain-to-Source Voltage (V)
g
D
0.6
- Total Gate Charge (nC)
V
8 V
GS
V
Gate Charge
400
GS
2
V
= 4.5 V
V
DS
= 5 V
GS
= 30 V
0.9
= 10 V
600
3
V
GS
1.2
= 10 V
V
800
DS
4
1.5
= 48 V
5 V
4 V
7 V
6 V
1000
1.8
5
A
= 25 °C, unless otherwise noted)
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
8
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
GS
V
5
2
V
V
GS
Transfer Characteristics
T
GS
DS
0
= 10 V at 500 mA
J
= 0 V
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
10
4
T
J
50
= - 55 °C
Vishay Siliconix
V
GS
C
15
C
C
6
75
oss
iss
rss
= 4.5 V at 25 mA
125 °C
Si1029X
100
www.vishay.com
20
25 °C
8
125
150
25
10
5