SI1029X-T1-E3 Vishay, SI1029X-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1029X-T1-E3
• Description: MOSFET N/P-CH COMPL 60V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1029X-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 305mA, 190mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 30pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1029X-T1-E3TR

Si1029X
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State
Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
b
a
c
c
a
a
a
J
= 25 °C, unless otherwise noted)
Symbol
R
V
I
I
I
C
t
V
DS(on)
V
C
GS(th)
D(on)
Q
Q
C
t
GSS
DSS
OFF
g
Q
ON
DS
SD
oss
iss
rss
gd
fs
gs
g
V
V
I
D
DS
V
GS
V
I
D
V
 - 165 mA, V
GS
V
DS
V
V
 200 mA, V
DS
= - 30 V, V
DS
= - 10 V, I
DS
DS
= 10 V, I
= 10 V, V
V
V
V
V
V
V
= - 50 V, V
V
V
= - 25 V, V
V
I
V
= 50 V, V
V
V
V
GS
DS
V
DS
= 25 V, V
V
V
GS
I
S
V
DS
DS
V
DS
V
GS
S
DD
V
DS
GS
DS
DS
DS
DD
DS
DS
= - 200 mA, V
GS
DS
= 200 mA, V
GS
= - 10 V, I
= - 10 V, I
= - 10 V, V
= - 4.5 V, I
= 7.5 V, V
= - 10 V, V
= V
= 4.5 V, I
= - 25 V, R
= 0 V, V
= 10 V, V
= 10 V, I
= 10 V, I
= V
= - 50 V, V
= 30 V, R
= 0 V, I
= 0 V, V
= 50 V, V
= 0 V, I
D
D
N-Channel
P-Channel
GS
N-Channel
P-Channel
N-Channel
P-Channel
GS
GS
Test Conditions
= 500 mA, T
= - 500 mA, T
GS
GEN
GEN
GS
GS
GS
= - 15 V, I
GS
, I
= 4.5 V, I
, I
D
= 0 V, T
D
GS
= 0 V, f = 1 MHz
D
= 0 V, T
D
D
D
D
D
D
= 10 V, R
= - 10 V, R
GS
= 0 V, f = 1 MHz
GS
D
GS
GS
= - 250 µA
GS
= - 10 µA
L
= 500 mA
= - 500 mA
= 250 µA
GS
= 200 mA
= - 100 mA
= 200 mA
= 10 µA
L
GS
GS
= - 25 mA
= ± 10 V
= 150 
GS
= ± 5 V
= - 4.5 V
= 150 
= 4.5 V
= - 4.5 V
= - 10 V
= 0 V
= 0 V
= 0 V
= 0 V
D
D
J
J
J
= 250 mA
= 85 °C
= - 500 mA
= 85 °C
= 125 °C
J
g
= 125 °C
g
= 10 
= 10 
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
- 600
Min.
- 60
- 50
500
800
- 1
60
1
S10-2432-Rev. C, 25-Oct-10
1700
Typ.
200
100
750
260
225
460
75
30
23
10
15
20
20
35
Document Number: 71435
6
3
5
± 100
± 150
± 200
Max.
- 250
- 3.0
± 50
1.40
2.50
- 1.4
- 25
100
2.5
1.4
10
3
8
4
6
Unit
mA
ms
nA
pC
pF
ns

V
V