SI1029X-T1-E3 Vishay, SI1029X-T1-E3 Datasheet - Page 4
![MOSFET N/P-CH COMPL 60V SOT563F](/photos/5/42/54218/pkg_5880_sml.jpg)
SI1029X-T1-E3
Manufacturer Part Number
SI1029X-T1-E3
Description
MOSFET N/P-CH COMPL 60V SOT563F
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI1029X-T1-E3
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 Ohm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
305mA, 190mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Input Capacitance (ciss) @ Vds
30pF @ 25V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
500mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.4ohm
Rds(on) Test Voltage Vgs
10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1029X-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Si1029X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (T
www.vishay.com
4
1000
100
10
1
0.00
V
GS
Source-Drain Diode Forward Voltage
T
J
= 0 V
0.3
= 125 °C
V
SD
- Source-to-Drain Voltage (V)
0.6
T
0.9
J
T
- 0.2
- 0.4
- 0.6
- 0.8
= - 55 °C
J
0.4
0.2
0.0
= 25 °C
Threshold Voltage Variance Over Temperature
- 50
1.2
- 25
T
1.5
0
J
- Junction Temperature (°C)
25
A
= 25 °C, unless otherwise noted)
50
I
D
= 250 µA
75
100
5
4
3
2
1
0
0
125
On-Resistance vs. Gate-to-Source Voltage
150
2
I
D
V
GS
= 200 mA
- Gate-to-Source Voltage (V)
4
S10-2432-Rev. C, 25-Oct-10
Document Number: 71435
6
I
D
= 500 mA
8
10