FW349-TL-E SANYO, FW349-TL-E Datasheet - Page 4

• Manufacturer Part Number: FW349-TL-E
• Description: MOSFET N/P-CH 45V 5/4.5A 8-SOP
• Manufacturer: SANYO

Specifications of FW349-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 45V
• Current - Continuous Drain (id) @ 25° C: 5A, 4.5A
• Gate Charge (qg) @ Vgs: 18.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 20V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1168-2

--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
100
160
140
120
100
10
10
80
60
40
20
3
2
7
5
3
2
7
9
8
7
6
5
4
3
2
1
0
0
0
0.1
0
0
0
V DS =24V
I D =5A
I D = --3A
--0.1
--2
2
--0.2
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
3
--4
--4.5A
5
Total Gate Charge, Qg -- nC
--0.3
R DS (on) -- V GS
Drain Current, I D -- A
SW Time -- I D
5
--6
V GS -- Qg
--0.4
I D -- V DS
7
--0.5
1.0
10
--8
--0.6
--10
t d (on)
2
--0.7
--12
3
15
--0.8
V DD =24V
V GS =10V
Ta=25 ° C
5
--14
--0.9
IT12880
IT12882
IT12884
IT12886
[Nch]
[Nch]
[Pch]
[Pch]
7
--1.0
--16
10
20
FW349
1000
0.01
100
160
140
120
100
1.0
0.1
10
--6
--5
--4
--3
--2
--1
80
60
40
20
0.01
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
3
2
7
5
5
3
2
7
5
3
0
--60
0
0
V DS = --10V
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm
Operation in this
area is limited by R DS (on).
--40
2 3
--0.5
5
--20
5 7
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
10
--1.0
Ambient Temperature, Ta -- °C
0.1
0
15
R DS (on) -- Ta
2 3
--1.5
20
I D -- V GS
20
A S O
5 7
40
Ciss
--2.0
1.0
60
25
2 3
--2.5
80
30
2
✕0.8mm) 1unit
5 7
100
--3.0
35
10
120
No.8750-4/6
f=1MHz
--3.5
2 3
≤10µs
40
140
IT12883
IT12881
IT12885
IT12887
[Nch]
[Nch]
[Pch]
[Pch]
5 7
--4.0
160
45