FW349-TL-E SANYO, FW349-TL-E Datasheet
FW349-TL-E
Specifications of FW349-TL-E
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FW349-TL-E Summary of contents
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... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FW349 SANYO Semiconductors Symbol Conditions ...
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... Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Package Dimensions unit : mm (typ) 7005-003 0.43 5.0 1.27 0.595 FW349 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =45V =0V I GSS V GS =±16V = (off =10V =1mA yfs =10V = (on =5A =10V ...
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... IT12874 [Nch] 100 Ta=25 ° IT12876 [Nch] 10 1.0 0.1 0. 1.0 10 IT12878 --24V --4. =5.33Ω OUT PW=10µs D.C.≤1% G FW349 50Ω =10V 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage (on --60 --40 -- 100 Ambient Temperature ° 0.2 ...
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... Total Gate Charge --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 Drain-to-Source Voltage (on 160 140 120 --3A 100 --4. --2 --4 --6 --8 --10 Gate-to-Source Voltage FW349 [Nch =24V V GS =10V 2 1000 100 IT12880 [Nch 1 Operation in this area is limited (on). 0 Ta=25° ...
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... Total Gate Charge 2.6 Mounted on a ceramic board (1500mm 2.4 PW≤10s 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C FW349 [Pch] -- 10V --1 --0 --0. --10 IT12888 [Pch --24V --10V 3 2 1000 100 7 5 ...
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... Note on usage : Since the FW349 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...