FW349-TL-E SANYO, FW349-TL-E Datasheet - Page 3

• Manufacturer Part Number: FW349-TL-E
• Description: MOSFET N/P-CH 45V 5/4.5A 8-SOP
• Manufacturer: SANYO

Specifications of FW349-TL-E

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 45V
• Current - Continuous Drain (id) @ 25° C: 5A, 4.5A
• Gate Charge (qg) @ Vgs: 18.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 20V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1168-2

Switching Time Test Circuit
[N-channel]
100
1.0
0.1
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
90
80
70
60
50
40
30
20
10
0.01
0
0
7
5
3
2
7
5
3
2
0
0
V DS =10V
P.G
10V
0V
PW=10µs
D.C.≤1%
0.1
I D =3A
2
2
V IN
3
0.2
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
5 7
4
5A
0.3
V IN
R DS (on) -- V GS
Drain Current, I D -- A
0.1
G
50Ω
6
I D -- V DS

0.4
y
2
fs -- I D
0.5
3
8
V DD =24V
D
5 7
0.6
S
10
I D =5A
R L =4.8Ω
1.0
FW349
0.7
12
2
V OUT
0.8
3
Ta=25 ° C
14
0.9
IT12874
IT12876
IT12878
[Nch]
[Nch]
[Nch]
5 7
1.0
16
10
FW349
[P-channel]
--10V
P.G
0.01
100
1.0
0.1
10
90
80
70
60
50
40
30
20
10
0V
7
6
5
4
3
2
1
0
0
PW=10µs
D.C.≤1%
--60
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0
V DS =10V
V IN
--40
0.5
--20
0.4
V IN
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
Ambient Temperature, Ta -- °C
1.0
G
50Ω
0
R DS (on) -- Ta
20
1.5
I D -- V GS
I S -- V SD
0.6
V DD = --24V
D
40
2.0
S
I D = --4.5A
R L =5.33Ω
60
FW349
0.8
2.5
80
V OUT
100
3.0
1.0
120
No.8750-3/6
V GS =0V
3.5
140
IT12875
IT12877
IT12879
[Nch]
[Nch]
[Nch]
160
4.0
1.2