SI3590DV-T1-E3 Vishay, SI3590DV-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI3590DV-T1-E3
• Description: MOSFET N/P-CH 30V 2.5/1.7A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3590DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.077 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.5 A @ N Channel or 1.7 A @ P Channel
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Rds(on) Test Voltage Vgs: 12V
• Power Dissipation Pd: 1.15W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Termination Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3590DV-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
0.01
0.1
0.01
2
1
0.1
10
2
1
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square W ave Pulse Duration (s)
10
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1 0
Notes:
P
DM
JM
- T
1
A
t
1
= P
t
2
DM
Vishay Siliconix
Z
th J A
th J A
100
t
t
(t )
1
2
Si3590DV
= 87 °C/W
www.vishay.com
600
1
0
5