SI3590DV-T1-E3 Vishay, SI3590DV-T1-E3 Datasheet - Page 4
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SI3590DV-T1-E3
Manufacturer Part Number
SI3590DV-T1-E3
Description
MOSFET N/P-CH 30V 2.5/1.7A 6TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI3590DV-T1-E3.pdf
(9 pages)
Specifications of SI3590DV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
77 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A, 1.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.5nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.077 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.5 A @ N Channel or 1.7 A @ P Channel
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Rds(on) Test Voltage Vgs
12V
Power Dissipation Pd
1.15W
Operating Temperature Range
-55°C To +150°C
No. Of Pins
6
Termination Type
SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3590DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3590DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3590DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.1
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
T
J
V
= 150 °C
0.3
SD
0
- Source-to-Drain Voltage (V)
T
I
D
Threshold Voltage
J
= 250 µA
- T emperature (°C)
2 5
0.6
5 0
0.9
7 5
T
J
= 25 °C
0.01
100
0.1
100
10
1
0.1
1.2
* V
125
Limited by R
Safe Operating Area, Junction-to-Case
GS
Limited
I
D( on)
> minimum V
150
1.5
V
DS -
Single Pulse
T
DS(on)
C
Drain-to-Source Voltage (V)
1
= 25 °C
GS
*
BV
at which R
DS S
Limited
I
DM
DS(on)
1 0
Limited
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 s, 1 s
100 µs
1 ms
10 ms
100 ms
DC
I
D
1
V
100
= 3 A
GS
0.1
- Gate-to-Source Voltage (V)
Time (s)
2
S09-1927-Rev. C, 28-Sep-09
Document Number: 72032
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