SI3590DV-T1-E3 Vishay, SI3590DV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3590DV-T1-E3
• Description: MOSFET N/P-CH 30V 2.5/1.7A 6TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3590DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A, 1.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.077 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.5 A @ N Channel or 1.7 A @ P Channel
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Rds(on) Test Voltage Vgs: 12V
• Power Dissipation Pd: 1.15W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Termination Type: SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3590DV-T1-E3TR

Si3590DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.1
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
T
J
V
= 150 °C
0.3
SD
0
- Source-to-Drain Voltage (V)
T
I
D
Threshold Voltage
J
= 250 µA
- T emperature (°C)
2 5
0.6
5 0
0.9
7 5
T
J
= 25 °C
0.01
100
0.1
100
10
1
0.1
1.2
* V
125
Limited by R
Safe Operating Area, Junction-to-Case
GS
Limited
I
D( on)
> minimum V
150
1.5
V
DS -
Single Pulse
T
DS(on)
C
Drain-to-Source Voltage (V)
1
= 25 °C
GS
*
BV
at which R
DS S
Limited
I
DM
DS(on)
1 0
Limited
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 s, 1 s
100 µs
1 ms
10 ms
100 ms
DC
I
D
1
V
100
= 3 A
GS
0.1
- Gate-to-Source Voltage (V)
Time (s)
2
S09-1927-Rev. C, 28-Sep-09
Document Number: 72032
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10
30
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