SI3590DV Vishay Siliconix, SI3590DV Datasheet
SI3590DV
Available stocks
Related parts for SI3590DV
SI3590DV Summary of contents
Page 1
... stg N-Channel Typ Symbol 93 R thJA 130 R 75 thJF Si3590DV Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D Ultra Low r N- and P-Channel for High DS(on) Efficiency D Optimized for High-Side/Low-Side D Minimized Conduction Losses APPLICATIONS D Portable Devices Including PDAs, Cellular Phones and Pagers S 2 ...
Page 2
... Si3590DV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
Page 3
... Q - Total Gate Charge (nC) g Document Number: 72032 S-21979—Rev. A, 04-Nov-02 New Product 4 5 450 360 270 180 1.8 1.6 1.4 1.2 1.0 0.8 0 Si3590DV Vishay Siliconix N−CHANNEL Transfer Characteristics 125_C C 2 25_C - 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Capacitance C iss ...
Page 4
... Si3590DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 25_C J 0.1 0.00 0.3 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 = 250 0.2 -0.0 -0.2 -0.4 -0.6 -50 - Temperature (_C) J www.vishay.com 4 New Product 0.25 0.20 0.15 0.10 0.05 0.00 1.2 1.5 100 125 150 Safe Operating Area, Junction-to-Case ...
Page 5
... Document Number: 72032 S-21979—Rev. A, 04-Nov-02 New Product - Square Wave Pulse Duration (sec Square Wave Pulse Duration (sec) Si3590DV Vishay Siliconix N−CHANNEL Notes Duty Cycle Per Unit Base = R = 87_C/W ...
Page 6
... Si3590DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics thru 3 2 Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0.75 0. 0.30 0.15 0. Drain Current (A) D Gate Charge ...
Page 7
... I r Limited DS(on D(on) Limited 0 25_C C Single Pulse BV Limited DSS 0.01 0 Drain-to-Source Voltage (V) DS Si3590DV Vishay Siliconix P−CHANNEL On-Resistance vs. Gate-to-Source Voltage Gate-to-Source Voltage (V) GS Single Pulse Power, Junction-to-Ambient 0.01 0.1 1 Time (sec) Limited DM 100 ...
Page 8
... Si3590DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 8 New Product - Square Wave Pulse Duration (sec) ...