SI3590DV-T1-GE3 Vishay, SI3590DV-T1-GE3 Datasheet
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SI3590DV-T1-GE3
Specifications of SI3590DV-T1-GE3
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SI3590DV-T1-GE3 Summary of contents
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... 2.85 mm Ordering Information: Si3590DV-T1-E3 (Lead (Pb)-free) Si3590DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si3590DV Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Drain Current (A) D On-Resistance vs. Drain Current otal Gate Charge (nC) g Gate Charge Document Number: 72032 S09-1927-Rev. C, 28-Sep Si3590DV Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 450 360 C iss 270 180 90 C oss C rss ...
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... Si3590DV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 150 ° 0.1 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0 emperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1 100 125 150 100 I Limited DM Limited by R ...
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... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72032 S09-1927-Rev. C, 28-Sep- Square W ave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3590DV Vishay Siliconix Notes Duty Cycle Per Unit Base = °C ...
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... Si3590DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted thru 3 Drain-to-Source Voltage (V) DS Output Characteristics 0.75 0. 0.30 0.15 0. Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge www.vishay.com ° ° 0.0 0.5 1.0 1.5 2 ...
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... Limited DS(on on) Limited 0 °C C Single Pulse BV Limited DS S 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si3590DV Vishay Siliconix 0.5 0.4 0 0.2 0.1 0 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient I ...
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... Si3590DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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