BSO211P Infineon Technologies, BSO211P Datasheet - Page 7
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BSO211P
Manufacturer Part Number
BSO211P
Description
MOSFET DUAL P-CH 20V 4.7A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSO211P.pdf
(8 pages)
Specifications of BSO211P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
67 mOhm @ 4.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
1.2V @ 25µA
Gate Charge (qg) @ Vgs
23.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.067 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO211PINTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSO211P
Manufacturer:
INFINEON
Quantity:
5 510
Part Number:
BSO211P
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO211P H
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
13 Typ. avalanche energy
E
V
15 Drain-source breakdown voltage
V
Rev.1.2
AS
DD
(BR)DSS
-24.5
-23.5
-22.5
-21.5
-20.5
-19.5
-18.5
mJ
= f (T
-23
-22
-21
-20
-19
-18
= -10 V, R
V
30
20
15
10
5
0
-60
25
BSO211P
j
= f (T
), par.: I
-20
50
GS
j
)
20
D
= 25 Ω
= -4.7 A
75
60
100
100
°C
°C
T
T
j
j
Page 7
180
150
14 Typ. gate charge
|V
parameter: I
GS
| = f (Q
V
12
10
9
8
7
6
5
4
3
2
1
0
0
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
Gate
D
4
= -4.7 A pulsed
)
8
12
2002-01-22
16
BSO211P
nC
|Q Gate |
22