BSO211P Infineon Technologies, BSO211P Datasheet - Page 6

• Manufacturer Part Number: BSO211P
• Description: MOSFET DUAL P-CH 20V 4.7A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO211P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1.2V @ 25µA
• Gate Charge (qg) @ Vgs: 23.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 920pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.067 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO211PINTR

9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
mΩ
Rev.1.2
10
pF
10
100
80
70
60
50
40
30
-60
3
2
0
DS
= f(T j )
)
D
-20
GS
= -4.7 A, V
5
=0, f=1 MHz
20
Coss
Ciss
Crss
10
98%
GS
typ.
60
= -4.5 V
100
V
°C
T
- V
j
DS
160
20
Page 6
12 Forward character. of reverse diode
I
parameter: T j , t
10 Typ. gate threshold voltage
V
parameter: V
F
GS(th)
= f (V
-10
-10
-10
-10
1.6
1.2
0.8
0.6
0.4
0.2
A
V
-1
1
0
-60
2
1
0
0
BSO211P
= f (T j )
SD
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
2%
typ.
98%
-1.6
60
-2
100
2002-01-22
BSO211P
-2.4
°C
V
V
T
SD
j
160
-3