BSO211P Infineon Technologies, BSO211P Datasheet - Page 5

• Manufacturer Part Number: BSO211P
• Description: MOSFET DUAL P-CH 20V 4.7A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO211P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1.2V @ 25µA
• Gate Charge (qg) @ Vgs: 23.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 920pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.067 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO211PINTR

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
Rev.1.2
= f ( V
= f (V
A
A
40
30
25
20
15
10
20
16
14
12
10
5
0
8
6
4
2
0
0
0
DS
GS
1
); T
); |V
0.5
p
p
= 80 µs
2
= 80 µs
j
=25°C
DS
3
|≥ 2 x |I
1
Vgs = -4.5V
Vgs = -5V
Vgs = -6V
Vgs = -7V
4
Vgs = -4V
1.5
5
D
| x R
6
2
Vgs = -3.5V
Vgs = -2.5V
Vgs = -3V
7
DS(on)max
8
V
- V
- V
V
DS
GS
10
3
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: t p = 80 µs
fs
DS(on)
= f(I
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Ω
0.1
S
20
16
14
12
10
0
8
6
4
2
0
0
0
D
= f (I
); T
2
Vgs = -2.5V
5
j
=25°C
D
GS
4
)
10
6
Vgs = -3V
15
8
10
20
12
25
14
Vgs= - 3.5V
Vgs= - 4V
Vgs = - 4.5V
Vgs = - 5V
Vgs= - 6V
Vgs = - 7V
2002-01-22
30
BSO211P
16
A
A
- I
- I
D
D
20
40