BSO211P Infineon Technologies, BSO211P Datasheet - Page 3

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BSO211P

Manufacturer Part Number
BSO211P
Description
MOSFET DUAL P-CH 20V 4.7A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO211P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
67 mOhm @ 4.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
1.2V @ 25µA
Gate Charge (qg) @ Vgs
23.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.067 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO211PINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO211P
Manufacturer:
INFINEON
Quantity:
5 510
Part Number:
BSO211P
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSO211P H
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev.1.2
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
çV
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
GS
DD
DD
DD
GS
DD
A
GS
R
F
=-3.8A
=-1A, R
DS
=25°C
=-10V, |I
/dt=100A/µs
=0, V
=-10V, V
=-15V, I
=-15V, I
=0 to -4.5V
=-15V, I
=0, |I F | = |I D |
ç≥2*çI
Conditions
DS
G
D
=6Ω
F
D
D
D
ç*R
=-15V,
|
GS
=-4.7A
=-4.7A,
=-4.7A
=
DS(on)max
|l
=-4.5V,
D
|,
min.
6.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.93
12.8
10.6
26.3
23.3
1.35
15.9
24.3
typ.
690
261
214
-1.9
7.8
5.6
7.6
-
-
2002-01-22
BSO211P
max.
-18.8
11.7
39.5
23.9
30.4
920
391
321
-1.4
8.1
9.5
16
35
-2
2
-
-
Unit
S
pF
ns
nC
V
A
V
ns
nC

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