BSO612CV G Infineon Technologies, BSO612CV G Datasheet - Page 9

• Manufacturer Part Number: BSO612CV G
• Description: MOSFET N/P-CH 60V 2A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO612CV G

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A, 2A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 15.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 120 m Ohms
• Drain-source Breakdown Voltage: + 60 V / - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A, - 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): 60.0 V-60.0 V
• Id (max): 3.0 A-2.0 A
• Idpuls (max): 12.0 A-8.0 A
• Rds (on) (max) (@10v): 120.0 mOhm300.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO612CV G; BSO612CVGINTR; BSO612CVGT; BSO612CVGXT; BSO612CVT; BSO612CVXTINTR; BSO612CVXTINTR; SP000216307

Drain-source on-resistance (N-Ch.)
R
parameter : I
Gate threshold voltage (N-Ch.)
V
parameter: V
GS(th)
DS(on)
W
0.34
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
V
V
V
V
5.0
5.0
5.0
5.0
4.0
4.0
4.0
4.0
3.5
3.5
3.5
3.5
3.0
3.0
3.0
3.0
2.5
2.5
2.5
2.5
2.0
2.0
2.0
2.0
1.5
1.5
1.5
1.5
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.0
0.0
0.0
0.0
-60
-60
-60
-60
-60
BSO 612 CV
= f ( T j )
= f ( T
-20
-20
-20
-20
-20
D
GS
j
)
= 3 A , V
= V
20
98%
20
20
20
20
typ
DS
98%
2%
typ
, I
60
GS
D
60
60
60
60
= 20 µA
= 10 V
100
100
100
100
100
°C
Rev. 2.0
°C
°C
°C
°C
T
T
T
T
T
j
j
j
j
j
180
160
160
160
160
Page 9
Drain-source on-resistance (P-Ch.)
R
parameter : I
Gate threshold voltage (P-Ch.)
V
parameter: V
DS(on)
GS(th)
0.80
W
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-5.0
-5.0
-5.0
-5.0
V
V
V
V
-4.0
-4.0
-4.0
-4.0
-3.5
-3.5
-3.5
-3.5
-3.0
-3.0
-3.0
-3.0
-2.5
-2.5
-2.5
-2.5
-2.0
-2.0
-2.0
-2.0
-1.5
-1.5
-1.5
-1.5
-1.0
-1.0
-1.0
-1.0
-0.5
-0.5
-0.5
-0.5
0.0
0.0
0.0
0.0
-60
-60
-60
-60
-60
BSO 612 CV
= f ( T j )
= f ( T
-20
-20
-20
-20
-20
D
GS
j
)
= -2 A , V
= V
20
98%
20
20
20
20
typ
98%
DS
typ
2%
, I
60
D
GS
60
60
60
60
= -450 µA
BSO 612 CV G
= -10 V
100
100
100
100
100
2006-08-25
°C
°C
°C
°C
°C
T
T
T
T
T
j
j
j
j
j
180
160
160
160
160