BSO612CV G Infineon Technologies, BSO612CV G Datasheet - Page 12

MOSFET N/P-CH 60V 2A 8-SOIC

BSO612CV G

Manufacturer Part Number
BSO612CV G
Description
MOSFET N/P-CH 60V 2A 8-SOIC
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSO612CV G

Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3A, 2A
Vgs(th) (max) @ Id
4V @ 20µA
Gate Charge (qg) @ Vgs
15.5nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
120 m Ohms
Drain-source Breakdown Voltage
+ 60 V / - 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A, - 2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
SO-8
Vds (max)
60.0 V-60.0 V
Id (max)
3.0 A-2.0 A
Idpuls (max)
12.0 A-8.0 A
Rds (on) (max) (@10v)
120.0 mOhm300.0 mOhm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSO612CV G
BSO612CVGINTR
BSO612CVGT
BSO612CVGXT
BSO612CVT
BSO612CVXTINTR
BSO612CVXTINTR
SP000216307
Drain-source breakdown voltage
V
(BR)DSS
V
72
68
66
64
62
60
58
56
54
-60
BSO 612 CV
= f ( T
-20
j
), (N-Ch.)
20
60
100
°C
Rev. 2.0
T
j
180
Page 12
Drain-source breakdown voltage
V
(BR)DSS
-72
-68
-66
-64
-62
-60
-58
-56
-54
V
-60
BSO 612 CV
= f ( T
-20
j
), (P-Ch.)
20
60
BSO 612 CV G
100
2006-08-25
°C
T
j
180

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