BSO612CV G Infineon Technologies, BSO612CV G Datasheet - Page 11

• Manufacturer Part Number: BSO612CV G
• Description: MOSFET N/P-CH 60V 2A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO612CV G

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A, 2A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 15.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 120 m Ohms
• Drain-source Breakdown Voltage: + 60 V / - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A, - 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): 60.0 V-60.0 V
• Id (max): 3.0 A-2.0 A
• Idpuls (max): 12.0 A-8.0 A
• Rds (on) (max) (@10v): 120.0 mOhm300.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO612CV G; BSO612CVGINTR; BSO612CVGT; BSO612CVGXT; BSO612CVT; BSO612CVXTINTR; BSO612CVXTINTR; SP000216307

Avalanche Energy E
parameter: I
R
Typ. gate charge (N-Ch.)
V
parameter: I
GS
GS
mJ
V
= f ( Q
50
40
35
30
25
20
15
10
16
12
10
= 25
5
0
8
6
4
2
0
25
0
BSO 612 CV
W
45
Gate
0,2
2
D
D
V
= 3 A, V
= 3 A
DS max
)
65
4
85
AS
DD
6
= f ( T
105
= 25 V
0,8
8
j
125
) (N-Ch.)
V
DS max
nC
Rev. 2.0
°C
Q
T
j
Gate
165
12
Page 11
Avalanche Energy E
parameter: I
R
Typ. gate charge (P-Ch.)
V
parameter: I
GS
GS
mJ
-16
-12
-10
V
80
60
50
40
30
20
10
= f ( Q
= 25
-8
-6
-4
-2
0
0
25
0
BSO 612 CV
W
2
45
Gate
D
D
4
= -2 A, V
= -2 A
0,2
)
65
V
6
DS max
85
8
AS
DD
10
= f ( T
105
= -25 V
12
BSO 612 CV G
j
125
)
14
2006-08-25
0,8
V
°C
16 nC 19
DS max
Q
T
Gate
j
165