BSO612CV G Infineon Technologies, BSO612CV G Datasheet - Page 8

• Manufacturer Part Number: BSO612CV G
• Description: MOSFET N/P-CH 60V 2A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO612CV G

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A, 2A
• Vgs(th) (max) @ Id: 4V @ 20µA
• Gate Charge (qg) @ Vgs: 15.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 120 m Ohms
• Drain-source Breakdown Voltage: + 60 V / - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A, - 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): 60.0 V-60.0 V
• Id (max): 3.0 A-2.0 A
• Idpuls (max): 12.0 A-8.0 A
• Rds (on) (max) (@10v): 120.0 mOhm300.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO612CV G; BSO612CVGINTR; BSO612CVGT; BSO612CVGXT; BSO612CVT; BSO612CVXTINTR; BSO612CVXTINTR; SP000216307

Typ. transfer characteristics (N-Ch.)
parameter: t
I
Typ. forward transconductance (N-Ch.)
g
parameter: g
D
fs
= f ( V
= f( I
A
S
7.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
7
6
5
4
3
2
1
0
0
0
D
GS
); T
1
), V
1
p
j
fs
= 25 °C
2
= 80 µs
DS
2
3
³
2 x I
4
3
5
D
x R
4
6
DS(on)max
7
5
V
8
Rev. 2.0
GS
A
V
I
D
10
7
Page 8
Typ. transfer characteristics (P-Ch.)
parameter: t
I
Typ. forward transconductance (P-Ch.)
g
parameter: g
D
fs
= f ( V
= f( I
A
S
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.0
D
GS
); T
), V
-1.0
1.0
j
p
fs
= 25 °C
= 80 µs
DS
-2.0
2.0
³
2 x I
-3.0
3.0
D
x R
BSO 612 CV G
-4.0
4.0
DS(on)max
2006-08-25
V
GS
A
V
I
D
-6.0
6.0