PMGD8000LN,115 NXP Semiconductors, PMGD8000LN,115 Datasheet - Page 7

• Manufacturer Part Number: PMGD8000LN,115
• Description: MOSFET N-CH TRENCH DL 30V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD8000LN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 125mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 350pC @ 4.5V
• Input Capacitance (ciss) @ Vds: 18.5pF @ 5V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.125 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2370-2; 934057621115; PMGD8000LN T/R

Philips Semiconductors
9397 750 10939
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
1.5
0.5
GS
= 100 A; V
2
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
0
= V
GS
max
typ
min
60
(pF)
C
10 2
120
10
1
10 -1
T j ( C)
03ah20
180
Rev. 01 — 27 February 2003
1
Fig 10. Sub-threshold drain current as a function of
10
T
(A)
I D
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03ah18
DS
10 2
Dual TrenchMOS™ logic level FET
= 5 V
0.5
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
min
PMGD8000LN
1
typ
1.5
V GS (V)
max
03ah77
2
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