PMGD8000LN,115 NXP Semiconductors, PMGD8000LN,115 Datasheet

MOSFET N-CH TRENCH DL 30V SOT363

PMGD8000LN,115

Manufacturer Part Number
PMGD8000LN,115
Description
MOSFET N-CH TRENCH DL 30V SOT363
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMGD8000LN115.pdf (12 pages)

Specifications of PMGD8000LN,115

Package / Case
SC-70-6, SC-88, SOT-363
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 10mA, 4V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
125mA
Vgs(th) (max) @ Id
1.5V @ 100µA
Gate Charge (qg) @ Vgs
350pC @ 4.5V
Input Capacitance (ciss) @ Vds
18.5pF @ 5V
Power - Max
200mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8 Ohm @ 4 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
0.125 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2370-2
934057621115
PMGD8000LN T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
PMGD8000LN,115
Manufacturer:
ATMEL
Quantity:
3 400
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
Pin
1
2
3
4
5
6
Pinning - SOT363 (SC-88), simplified outline and symbol
Description
source (s1)
gate (g1)
drain (d2)
source (s2)
gate (g2)
drain (d1)
MBD128
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMGD8000LN in SOT363 (SC-88).
PMGD8000LN
Dual TrenchMOS™ logic level FET
Rev. 01 — 27 February 2003
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
Battery management
High-speed switch
Low power DC-to-DC converter.
Simplified outline
Top view
SOT363 (SC-88)
6
1
5
2
4
3
MSA370
Symbol
d 1
s 1
g 1
d 2
s 2
Product data
MSD901
g 2

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PMGD8000LN,115 Summary of contents

Page 1

PMGD8000LN Dual TrenchMOS™ logic level FET Rev. 01 — 27 February 2003 MBD128 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 (SC-88). 2. Features TrenchMOS™ technology Very fast ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of ambient temperature Limit R ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance th(j-a) = 0.5 (K/W) 0 0.1 0.05 0.02 single pulse 10 10 ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors 0. (A) 0.2 0.15 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values ...

Page 7

Philips Semiconductors 2 V GS(th) (V) max 1.5 typ 1 min 0 100 Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 8

Philips Semiconductors 0. (A) 0.2 0.15 0.1 150 C 0. 0.2 0.4 0 and 150 Fig 12. Source (diode forward) ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 0.25 1.1 mm 0.1 ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20030227 - Product data (9397 750 10939) 9397 750 10939 Product data Dual TrenchMOS™ logic level FET Rev. 01 — 27 February 2003 PMGD8000LN © Koninklijke ...

Page 11

Philips Semiconductors Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 12

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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