PMGD8000LN,115 NXP Semiconductors, PMGD8000LN,115 Datasheet - Page 6

• Manufacturer Part Number: PMGD8000LN,115
• Description: MOSFET N-CH TRENCH DL 30V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD8000LN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 125mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 350pC @ 4.5V
• Input Capacitance (ciss) @ Vds: 18.5pF @ 5V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.125 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2370-2; 934057621115; PMGD8000LN T/R

Philips Semiconductors
9397 750 10939
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(A)
T
T
I D
0.25
0.15
0.05
( )
j
j
0.2
0.1
= 25 C
= 25 C
0
4
3
2
1
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
0.05
0.2
0.1
V GS = 2.5 V
0.15
5 V
0.4
4 V
V GS = 2.5 V
V DS (V)
0.2
3.5 V
I D (A)
3 V
03ah14
03ah15
3.5 V
3 V
4 V
5 V
0.25
Rev. 01 — 27 February 2003
0.6
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
I D
a
j
0.5
0.4
0.3
0.2
0.1
1.5
0.5
= 25 C and 150 C; V
=
0
2
1
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
--------------------------- -
R
0
DSon 25 C
R
V DS > I D x R DSon
DSon
Dual TrenchMOS™ logic level FET
1
0
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
DS
PMGD8000LN
60
2
25 C
I
D
R
DSon
120
T j = 150 C
3
V GS (V)
T j ( C)
03ah16
03af18
180
4
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