PMGD8000LN,115 NXP Semiconductors, PMGD8000LN,115 Datasheet - Page 2

• Manufacturer Part Number: PMGD8000LN,115
• Description: MOSFET N-CH TRENCH DL 30V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD8000LN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 125mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 350pC @ 4.5V
• Input Capacitance (ciss) @ Vds: 18.5pF @ 5V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.125 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2370-2; 934057621115; PMGD8000LN T/R

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 10939
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
I
I
P
T
T
Source-drain diode
I
D
D
DM
S
DS
tot
j
DS
GS
tot
stg
j
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
Quick reference data
Limiting values
Conditions
25 C
T
T
V
V
Conditions
25 C
T
T
T
T
Rev. 01 — 27 February 2003
amb
amb
amb
amb
amb
amb
amb
GS
GS
= 4 V; I
= 2.5 V; I
= 25 C; V
= 25 C
= 25 C; V
= 70 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
T
T
j
j
150 C
150 C
D
= 10 mA
D
Figure 1
= 1 mA
GS
GS
GS
= 4 V
= 4 V;
= 4 V;
p
Figure 2
Figure 2
10 s;
Figure 3
Dual TrenchMOS™ logic level FET
and
3
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
PMGD8000LN
Typ
-
-
-
-
1.8
2.9
Min
-
-
-
-
-
-
-
55
55
Max
30
125
0.2
150
8
13
Max
30
125
100
250
0.2
+150
+150
125
15
2 of 12
Unit
V
mA
W
Unit
V
V
mA
mA
mA
W
mA
C
C
C