ZXMC10A816N8TC Diodes Inc, ZXMC10A816N8TC Datasheet - Page 9

• Manufacturer Part Number: ZXMC10A816N8TC
• Description: MOSFET DUAL COMPL 100V 8-SOIC
• Manufacturer: Diodes Inc

Specifications of ZXMC10A816N8TC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 497pF @ 50V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC10A816N8DITR

Q2 (P-channel) typical characteristics –continued
Test circuits
Issue 1.3 - March 2009
© Diodes Incorporated 2009
Capacitance v Drain-Source Voltage
V
G
1000
800
600
400
200
0.1
0
Q
GS
Basic gate charge waveform
t
Switching time waveforms
r
-V
t
(on)
DS
t
d(off)
- Drain - Source Voltage (V)
C
1
Q
ISS
Q
G
GD
Charge
C
OSS
C
t
r
10
RSS
t
(on)
t
d(on)
V
f = 1MHz
GS
= 0V
100
90%
10%
V
V
DS
GS
9
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
I
D
Gate charge test circuit
= -2.1A
2
Pulse width
Duty factor 0.1%
12V
R
4
G
Q - Charge (nC)
0.2 F
6
1 S
V
regulator
Current
GS
8
ZXMC10A816N8
50k
I
G
V
GS
10
R
12
www.diodes.com
Same as
D.U.T
D
D.U.T
V
DS
14
V
= -50V
DS
16
I
V
D
DS
18
V
DD