ZXMC10A816N8TC Diodes Inc, ZXMC10A816N8TC Datasheet - Page 10

• Manufacturer Part Number: ZXMC10A816N8TC
• Description: MOSFET DUAL COMPL 100V 8-SOIC
• Manufacturer: Diodes Inc

Specifications of ZXMC10A816N8TC

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 497pF @ 50V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC10A816N8DITR

Packaging details - SO8
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Issue 1.3 - March 2009
© Diodes Incorporated 2009
DIM
A1
D
H
A
E
L
0.053
0.004
0.189
0.228
0.150
0.016
Min.
Inches
0.069
0.010
0.197
0.244
0.157
0.050
Max.
Min.
1.35
0.10
4.80
5.80
3.80
0.40
Millimeters
Max.
1.75
0.25
5.00
6.20
4.00
1.27
10
DIM
θ
e
b
c
-
-
0.013
0.008
Min.
0°
0.050 BSC
-
-
Inches
0.020
0.010
Max.
ZXMC10A816N8
8°
-
-
www.diodes.com
Min.
0.33
0.19
0°
Millimeters
-
-
1.27 BSC
Max.
8°
0.51
0.25
-
-