ZXMC10A816N8TC Diodes Inc, ZXMC10A816N8TC Datasheet - Page 7

MOSFET DUAL COMPL 100V 8-SOIC

ZXMC10A816N8TC

Manufacturer Part Number
ZXMC10A816N8TC
Description
MOSFET DUAL COMPL 100V 8-SOIC
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMC10A816N8TC

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
230 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9.2nC @ 10V
Input Capacitance (ciss) @ Vds
497pF @ 50V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMC10A816N8DITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC10A816N8TC
Manufacturer:
DIODES
Quantity:
15 000
Company:
Part Number:
ZXMC10A816N8TC
Quantity:
500
Q1 (P-channel) electrical characteristics (at T
NOTES:
(a) Measured under pulsed conditions. Pulse width
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
Issue 1.3 - March 2009
© Diodes Incorporated 2009
Parameter
Static
Drain-Source breakdown
voltage
Zero Gate voltage Drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
Forward
Transconductance
Dynamic
Capacitance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total Gate charge
Gate-Source charge
Gate-Drain charge
Source–Drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(b) (c)
(c)
(c)
(a) (c)
(a)
(a)
(c)
(c)
Symbol
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
Min.
-100
-2.0
300 s; duty cycle
7
0.170
0.250
-0.85
Typ.
16.5
717
4.7
4.3
5.2
2.5
5.4
55
46
20
12
43
77
amb
= 25° C unless otherwise stated)
2%.
0.235
0.320
Max.
-0.95
-0.5
100
-4.0
Unit
µA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
ZXMC10A816N8
Conditions
I
V
V
I
V
V
V
V
f= 1MHz
V
I
R
V
I
I
I
D
D
D
D
S
S
DS
GS
GS
GS
DS
DS
DD
G
DS
= -1.7A, V
= -1.7A, di/dt= 100A/ s
= -250 A, V
= -1A
= -2.1A
= -250 A, V
= -100V, V
= -15V, I
= -50V, V
= -50V, V
= 20V, V
= -10V, I
= -4.5V, I
= -50V, V
www.diodes.com
6.0 ,
GS
D
D
D
GS
GS
GS
= -2.1A
= -1.0A
DS
DS
GS
= 0V
= -0.5A
GS
= 0V
= -10V
= -10V
= V
= 0V
= 0V
= 0V
GS

Related parts for ZXMC10A816N8TC