FJX597JBTF Fairchild Semiconductor, FJX597JBTF Datasheet

IC FET N-CH SI 20V 100MW SOT-323

FJX597JBTF

Manufacturer Part Number
FJX597JBTF
Description
IC FET N-CH SI 20V 100MW SOT-323
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJX597JBTF

Current - Drain (idss) @ Vds (vgs=0)
150µA @ 5V
Current Drain (id) - Max
1mA
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
20V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 1µA
Input Capacitance (ciss) @ Vds
3.5pF @ 5V
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Power - Max
100mW
Channel Type
N
Configuration
Single
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2004 Fairchild Semiconductor Corporation
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
Si N-channel Junction FET
Absolute Maximum Ratings
Electrical Characteristics
V
I
I
P
T
T
BV
V
I
lY
C
C
G
D
DSS
Symbol
J
STG
GDO
D
GS
ISS
RSS
FS
GDO
Symbol
(off)
l
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
FJX597JB
V
V
V
V
V
I
G
DS
DS
DS
DS
DS
= -100uA
=5V, I
=5V, V
=5V, V
=5V, V
=5V, V
Test Condition
D
GS
GS
GS
GS
=1 A
=0, f=1MHz
=0
=0, f=1MHz
=0, f=1MHz
Min.
150
-20
0.4
1. Drain 2. Source 3. Gate
-55 ~ 150
Ratings
3
100
150
-20
10
1
Typ.
0.65
-0.6
1.2
3.5
1
Marking: SCB
Max.
-1.5
240
SOT-323
Rev. A, October 2004
2
Units
mW
mA
mA
V
C
C
Units
mS
pF
pF
V
V
A

Related parts for FJX597JBTF

FJX597JBTF Summary of contents

Page 1

... Gate-Drain Breakdown Voltage GDO V (off) Gate-Source Cut-off Voltage GS I Drain Current DSS lY l Forward Transfer Admittance FS C Input Capacitance ISS C Output Capacitance RSS ©2004 Fairchild Semiconductor Corporation FJX597JB T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100uA G V =5V ...

Page 2

... V [V], GATE-SOURCE VOLTAGE GS Figure 0.1 0.1 I [mA], DRAIN CURRENT DSS Figure 5. V (off)-I GS ©2004 Fairchild Semiconductor Corporation 1000 I = 200 A DSS 900 800 700 600 500 400 300 200 100 = -0. -0. ...

Page 3

... Typical Characteristics [V], DRAIN-SOURCE VOLTAGE DS Figure RSS ©2004 Fairchild Semiconductor Corporation (Continued) 140 120 f = 1MHz 100 100 125 150 C], AMBIENT TEMPERATURE a Figure Rev. A, October 2004 ...

Page 4

... Package Dimensions 2.00±0.20 1.25±0.10 1.00±0.10 ©2004 Fairchild Semiconductor Corporation SOT-323 2.10±0.10 0.95±0.15 ±0.10 +0.05 0.05 –0.02 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 3° 0.90 1.30±0.10 Dimensions in Millimeters Rev. A, October 2004 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...

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