FJN598JBBU Fairchild Semiconductor, FJN598JBBU Datasheet

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FJN598JBBU

Manufacturer Part Number
FJN598JBBU
Description
IC FET N-CHAN SI -20V 1MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJN598JBBU

Current - Drain (idss) @ Vds (vgs=0)
100µA @ 5V
Current Drain (id) - Max
1mA
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
20V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 1µA
Input Capacitance (ciss) @ Vds
3.5pF @ 5V
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
150mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
Si N-channel Junction FET
Absolute Maximum Ratings
Electrical Characteristics
I
DSS
V
I
I
P
T
T
BV
V
I
lY
C
C
G
D
DSS
Symbol
J
STG
GDO
D
GS
ISS
RSS
FS
GDO
Symbol
(off)
l
Classification
Classification
I
DSS
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
( A)
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
100 ~ 170
T
a
=25 C unless otherwise noted
A
T
Parameter
a
=25 C unless otherwise noted
FJN598J
V
V
V
V
V
I
G
DS
DS
DS
DS
DS
= -100uA
=5V, I
=5V, V
=5V, V
=5V, V
=5V, V
Test Condition
D
GS
GS
GS
GS
=1 A
=0, f=1MHz
=0
=0, f=1MHz
=0, f=1MHz
150 ~ 240
B
1. Source 2. Gate 3. Drain
1
Min.
100
-20
0.4
-55 ~ 150
Ratings
150
150
-20
10
1
Typ.
0.65
-0.6
1.2
3.5
TO-92
210 ~ 350
Max.
-1.5
C
350
Rev. B1, November 2002
Units
mW
mA
mA
V
C
C
Units
ms
pF
pF
V
V
A

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FJN598JBBU Summary of contents

Page 1

... Gate-Source Cut-off Voltage GS I Drain Current DSS lY l Forward Transfer Admittance FS C Input Capacitance ISS C Output Capacitance RSS I Classification DSS Classification DSS ©2002 Fairchild Semiconductor Corporation FJN598J T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100uA G V =5V =5V ...

Page 2

... V [V], GATE-SOURCE VOLTAGE GS Figure 0.1 0.1 I [mA], DRAIN CURRENT DSS Figure 5. V off)-I GS( ©2002 Fairchild Semiconductor Corporation 1000 I = 200 A DSS 900 800 700 600 500 400 300 200 100 V = -0.4V = -0. ...

Page 3

... Typical Characteristics [V], DRAIN-SOURCE VOLTAGE DS Figure 7. C RSS -110 -112 -114 -116 -118 -120 10 100 I [ A], DRAIN CURRENT DSS Figure ©2002 Fairchild Semiconductor Corporation (Continued) 200 175 1MHz 150 125 100 700 V :V =4. CURVE 600 I :V =5V DSS DS 500 400 300 ...

Page 4

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B1, November 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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