PMBFJ309,215 NXP Semiconductors, PMBFJ309,215 Datasheet - Page 9

MOSFET N-CH 25V 30MA SOT23

PMBFJ309,215

Manufacturer Part Number
PMBFJ309,215
Description
MOSFET N-CH 25V 30MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBFJ309,215

Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Package / Case
SOT-23
Resistance Drain-source Rds (on)
50 Ohms
Drain Source Voltage Vds
25 V
Gate-source Cutoff Voltage
- 4 V
Gate-source Breakdown Voltage
- 25 V
Maximum Drain Gate Voltage
- 25 V
Drain Current (idss At Vgs=0)
12 mA to 30 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934008990215::PMBFJ309 T/R::PMBFJ309 T/R
Philips Semiconductors
9397 750 13403
Product data sheet
Fig 16. Gate current as a function of junction temperature; typical values.
Fig 17. Input admittance; typical values.
g
(mS)
is ,
10
10
b
10
is
1
2
1
V
10
DS
= 10 V; I
I
(pA)
GSS
D
10
10
10
10
= 10 mA; T
10
1
4
3
2
1
25
10
2
amb
b
g
is
is
= 25 C.
f (MHz)
PMBFJ308; PMBFJ309; PMBFJ310
25
mcd228
10
Rev. 03 — 23 July 2004
3
75
Fig 18. Forward transfer admittance; typical values.
g
fs
(mS)
, b
10
10
fs
1
2
V
10
DS
= 10 V; I
N-channel silicon field-effect transistors
125
D
= 10 mA; T
T
j
( C)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
mcd231
2
amb
g
b
fs
fs
175
= 25 C.
f (MHz)
mcd227
10
3
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