PMBFJ309,215 NXP Semiconductors, PMBFJ309,215 Datasheet - Page 2

• Manufacturer Part Number: PMBFJ309,215
• Description: MOSFET N-CH 25V 30MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ309,215

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Resistance Drain-source Rds (on): 50 Ohms
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: - 4 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: - 25 V
• Drain Current (idss At Vgs=0): 12 mA to 30 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934008990215::PMBFJ309 T/R::PMBFJ309 T/R

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
9397 750 13403
Product data sheet
Table 2:
[1]
Table 3:
Table 4:
[1]
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
PMBFJ308
PMBFJ309
PMBFJ310
Type number
PMBFJ308
PMBFJ309
PMBFJ310
Symbol
V
V
V
I
G
DS
GSO
GDO
Drain and source are interchangeable.
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Discrete pinning
Ordering information
Marking
Limiting values
Parameter
drain-source voltage (DC)
gate-source voltage
gate-drain voltage
forward gate current (DC)
Description
source
drain
gate
PMBFJ308; PMBFJ309; PMBFJ310
Package
Name
-
Rev. 03 — 23 July 2004
Description
plastic surface mounted package; 3 leads
[1]
Conditions
open drain
open source
Marking code
48*
49*
50*
N-channel silicon field-effect transistors
Simplified outline
1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
3
SOT23
2
Min
-
-
-
-
Symbol
Max
50
3
25
25
25
sym060
Version
SOT23
2
1
Unit
V
V
V
mA
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