PMBFJ309,215 NXP Semiconductors, PMBFJ309,215 Datasheet - Page 10

• Manufacturer Part Number: PMBFJ309,215
• Description: MOSFET N-CH 25V 30MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ309,215

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Resistance Drain-source Rds (on): 50 Ohms
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: - 4 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: - 25 V
• Drain Current (idss At Vgs=0): 12 mA to 30 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934008990215::PMBFJ309 T/R::PMBFJ309 T/R

Philips Semiconductors
9397 750 13403
Product data sheet
Fig 19. Reverse transfer admittance; typical values.
b
(mS)
rs ,
10
10
10
g
10
rs
1
2
1
2
V
10
DS
= 10 V; I
D
= 10 mA; T
10
2
amb
b
g
rs
rs
= 25 C.
f (MHz)
PMBFJ308; PMBFJ309; PMBFJ310
mcd226
10
Rev. 03 — 23 July 2004
3
Fig 20. Output admittance; typical values.
b
os ,
(mS)
10
10
g
10
os
1
2
1
V
10
DS
= 10 V; I
N-channel silicon field-effect transistors
D
= 10 mA; T
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
2
amb
b
g
os
os
= 25 C.
f (MHz)
mcd225
10
3
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