PMBFJ309,215 NXP Semiconductors, PMBFJ309,215 Datasheet - Page 12
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PMBFJ309,215
Manufacturer Part Number
PMBFJ309,215
Description
MOSFET N-CH 25V 30MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ309_TR.pdf
(14 pages)
Specifications of PMBFJ309,215
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Package / Case
SOT-23
Resistance Drain-source Rds (on)
50 Ohms
Drain Source Voltage Vds
25 V
Gate-source Cutoff Voltage
- 4 V
Gate-source Breakdown Voltage
- 25 V
Maximum Drain Gate Voltage
- 25 V
Drain Current (idss At Vgs=0)
12 mA to 30 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934008990215::PMBFJ309 T/R::PMBFJ309 T/R
Philips Semiconductors
10. Revision history
Table 9:
9397 750 13403
Product data sheet
Document ID
PMBFJ308_309_310_3
Modifications:
PMBFJ308_309_310_2
Revision history
Release date
20040723
19960911
•
•
The format of this data sheet has been redesigned to comply with the new presentation
and information standard of Philips Semiconductors.
Table 4
“Marking”: added new marking codes.
PMBFJ308; PMBFJ309; PMBFJ310
Data sheet status
Product data sheet
Product specification -
Rev. 03 — 23 July 2004
Change
notice
-
N-channel silicon field-effect transistors
Order number
9397 750 13403
9397 750 01141
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Supersedes
PMBFJ308_309_310_2
-
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