BUP314D Infineon Technologies, BUP314D Datasheet - Page 8

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Power Semiconductors
100ns
100ns
Figure 9. Typical switching times as a
Figure 11. Typical switching times as a
10ns
10ns
1ns
0A
0°C
t
t
t
t
t
t
t
f
t
d(off)
f
d(off)
d(on)
r
d(on)
r
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
J
I
CE
GE
,
C
10A
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
COLLECTOR CURRENT
50°C
20A
C
GE
=25A, R
=0/15V, R
J
CE
=150°C,
100°C
=600V,
30A
G
=22Ω,
G
=22Ω,
40A
TrenchStop
150°C
8
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
100 ns
7V
6V
5V
4V
3V
2V
1V
0V
®
10 ns
-50°C
1 ns
Series
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(I
T
C
CE
J
,
0°C
= 1.0mA)
=600V, V
JUNCTION TEMPERATURE
R
G
,
GATE RESISTOR
50°C
GE
IKW25T120
=0/15V, I
J
=150°C,
100°C
Rev. 2.2 Sep 08
C
=25A,
150°C
max.
typ.
min.
t
t
t
t
d(off)
d(on)
f
r