BUP314D Infineon Technologies, BUP314D Datasheet - Page 11

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Power Semiconductors
10
10
10
600V
400V
200V
Figure 21. Typical turn on behavior
Figure 23. IGBT transient thermal resistance
0V
-1
-2
-3
K/W
K/W
K/W
0us
V
I
10µs
C
CE
0.05
D=0.5
0.2
0.1
(V
Dynamic test circuit in Figure E)
(D = t
0.5us
GE
100µs
0.01
single pulse
0.02
=0/15V, R
t
p
P
,
/ T)
PULSE WIDTH
t,
1ms
TIME
1us
R
0.229
0.192
0.174
0.055
G
R , ( K / W )
1
C
=22Ω, T
1
=
10ms
1
/ R
1
1.5us
j
C
= 150 C,
1.10*10
1.56*10
1.35*10
1.52*10
2
=
100ms
, ( s )
2
/ R
TrenchStop
R
2
-1
-2
-3
-4
2
60A
40A
20A
0A
11
Figure 22. Typical turn off behavior
Figure 24. Diode transient thermal
60A
40A
20A
0A
10
10
10
®
0us
-1
-2
V
0
I
Series
K/W
K/W
K/W
C
CE
10µs
D=0.5
0.05
(V
Dynamic test circuit in Figure E)
impedance as a function of pulse
width
(D=t
0.2
0.1
0.5us
GE
P
=15/0V, R
100µs
0.02
0.01
single pulse
/T)
t
P
,
PULSE WIDTH
t,
1us
TIME
1ms
IKW25T120
G
=22Ω, T
R
0.282
0.317
0.294
0.107
R , ( K / W )
1
C
1
=
10ms
1.5us
1
/ R
Rev. 2.2 Sep 08
j
1
= 150 C,
C
1.01*10
1.15*10
1.30*10
1.53*10
2
100ms
=
, ( s )
2
/ R
R
2
600V
400V
200V
0V
-1
-2
-3
-4
2