BUP314D Infineon Technologies, BUP314D Datasheet - Page 15

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
TrenchStop
15
®
Series
i,v
p(t)
T (t)
j
I
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
a nd Stray capacity C
F
r
1
di /dt
1
r
F
I
1
r r m
IKW25T120
r
2
2
r
t
2
S
Q
Q =Q
t =t
S
r r
r r
t
Rev. 2.2 Sep 08
r r
S
Q
S
+
90% I
F
t
+
F
Q
t
F
=180nH
=39pF.
F
r r m
r
di
10% I
n
n
r r
r
n
/dt
r r m
V
T
t
R
C