BUP314D Infineon Technologies, BUP314D Datasheet - Page 7

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Power Semiconductors
70A
60A
50A
40A
30A
20A
10A
70A
60A
50A
40A
30A
20A
10A
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
0A
0A
0V
0V
V
GE
V
=17V
CE
11V
13V
15V
1V
2V
9V
V
7V
,
(T
(V
COLLECTOR
GE
j
CE
= 25°C)
,
T
GATE-EMITTER VOLTAGE
=20V)
2V
J
4V
=150°C
25°C
3V
6V
-
EMITTER VOLTAGE
4V
8V
5V
10V
6V
12V
TrenchStop
7
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
70A
60A
50A
40A
30A
20A
10A
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
®
0A
Series
-50°C
0V
V
V
GE
CE
=17V
(T
saturation voltage as a function of
junction temperature
(V
T
,
11V
15V
13V
1V
COLLECTOR
J
9V
7V
j
GE
,
= 150°C)
JUNCTION TEMPERATURE
= 15V)
0°C
2V
-
EMITTER VOLTAGE
3V
IKW25T120
50°C
4V
Rev. 2.2 Sep 08
5V
100°C
I
I
I
I
C
C
C
C
6V
=8A
=15A
=50A
=25A